

Parameter | Symbol | Min | Typ | Max | Unit |
Centre Wavelength | λ | 1577.5 | 1578 | 1578.5 | nm |
Side Mode Suppression Ratio | SMSR | 30 | 40 | dB | |
Threshold Current | Ith | 20 | 30 | mA | |
Operating Current | Iop | 80 | 120 | mA | |
Chip output Power | Pf | 10 | 15 | 30 | mW |
Quantum Efficiency | η | 0.08 | 0.12 | mW/mA | |
Current Tuning Coefficient | λ/I | 0.015 | nm/mA | ||
Temperature Tuning Coefficient | λ/T | 0.12 | nm/K | ||
Forward Voltage | Vf | 1.3 | 2 | V | |
Thermistor Resistance | RT | 9.5 | 10 | 10.5 | KΩ |
Thermistor Temp. Coefficient | -4.4 | %/°C | |||
Connector | FC/APC |
Spectrum
L-I Curve
DFB Linewidth Testing Result
Beam Quality
Schematic Diagram (Top View)
Pin Connection
PIN# | Function | PIN# | Function |
1 | Thermistor | 8 | NC |
2 | Thermistor | 9 | NC |
3 | NC | 10 | NC |
4 | PD Monitor Anode (-) | 11 | Laser Anode (+),Case Ground |
5 | PD Monitor Cathode (+) | 12 | RF Laser Input Cathode (–) |
6 | Thermoelectric Cooler (+) | 13 | Laser Anode (+),Case Ground |
7 | Thermoelectric Cooler (–) | 14 | NC |
Absolute Maximum Ratings
Item | Unit | Min | Typ | Max |
Case Temperature | ℃ | -5 | 25 | 70 |
Chip Temperature | ℃ | 10 | 25 | 40 |
Operating Current | mA | 0 | 100 | 150 |
Forward Voltage | V | 0.8 | 1.2 | 1.8 |
TEC Current | A | - | - | 1.2 |
Reverse Voltage(LD) | V | - | - | 2 |
Reverse Voltage(PD) | V | - | - | 20 |
Q1. What is the advantage about your company?
A1.LD-PD INC Established in 2004, we have become one of the leading sources in providing low cost
Photo detector, laser diode and some related driving products. Our well educated research and
development team is committed in search of answers to most frequently asked questions in today's
complex technology. Our well trained engineering team, employs top of the line state-of-the-art technology
in innovative fiber optics products
Q2. Why should I choose your products?
A2. Our products are high quality and low price.
At the core of LD-PD’s capabilities is its expertise in designing and manufacturing high power, high
reliability laser diodes. What’s more, LD-PD has been a manufacturer of Si detector and high speed
Germanium transistors and diodes since 2008 and a manufacturer of infrared photodetectors since 2010.
We offer SI,Ge, p-n, APD and InGaAs p-i-n high speed and large area photodetectors for radiation detection
and telecommunication applications. LD-PD maintains an inspection system in accordance with MIL-I-45208.
Photodiodes are subjected to Telcordia testing requirements (TA-NWT-00093), MIL-STD-883 test methods
and/or customer specifications.
Q3. Any other good service your company can provide?
A3. Yes,we can provide good service after-sale and fast delivery. Also make customization for special
specification according to your requirement.